Facile fabrication of complex networks of memristive devices

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dc.contributor.authorMinnai C
dc.contributor.authorBellacicca A
dc.contributor.authorBrown SA
dc.contributor.authorMilani P
dc.date.accessioned2018-03-22T00:15:04Z
dc.date.available2018-03-22T00:15:04Z
dc.date.issued2017en
dc.date.updated2017-09-11T02:44:37Z
dc.description.abstractWe describe the memristive properties of cluster-assembled gold films. We show that resistive switching is observed in pure metallic nanostructured films at room temperature and atmospheric pressure, in response to applied voltage inputs. In particular, we observe resistance changes up to 400% and archetypal switching events that have remarkable symmetry with the applied voltage. We associated this symmetry with 'potentiation' and 'anti-potentiation' processes involving the activation of synapses and of pathways comprising multiple synapses. The stability and reproducibility of the resistance switching, which lasted over many hours, make these devices ideal test-beds for exploration of the basic mechanisms of the switching processes, and allow convenient fabrication of devices that may have neuromorphic properties.en
dc.identifier.citationMinnai C, Bellacicca A, Brown SA, Milani P (2017). Facile fabrication of complex networks of memristive devices. SCIENTIFIC REPORTS. 7(1). 7955-.en
dc.identifier.doihttps://doi.org/10.1038/s41598-017-08244-y
dc.identifier.issn2045-2322
dc.identifier.issn2045-2322
dc.identifier.urihttp://hdl.handle.net/10092/15084
dc.languageEnglish
dc.language.isoen
dc.rightsOpen Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. © The Author(s) 2017en
dc.subject.anzsrcFields of Research::40 - Engineering::4018 - Nanotechnology::401804 - Nanoelectronicsen
dc.subject.anzsrcField of Research::10 - Technology::1006 - Computer Hardware::100604 - Memory Structuresen
dc.subject.anzsrcFields of Research::40 - Engineering::4018 - Nanotechnology::401807 - Nanomaterialsen
dc.titleFacile fabrication of complex networks of memristive devicesen
dc.typeJournal Articleen
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