A Raman heterodyne determination of the magnetic anisotropy for the ground and optically excited states of Y$_{2}$SiO$_{5}$ doped with Sm$^{3+}$
dc.contributor.author | Jobbitt NL | |
dc.contributor.author | Wells J-PR | |
dc.contributor.author | Longdell JJ | |
dc.contributor.author | Reid, Michael | |
dc.date.accessioned | 2021-05-31T22:09:05Z | |
dc.date.available | 2021-05-31T22:09:05Z | |
dc.date.issued | 2021 | en |
dc.date.updated | 2021-05-13T22:57:12Z | |
dc.description.abstract | We present the full magnetic g tensors of the 6H5/2Z1 and 4G5/2A1 electronic states for both crystallographic sites in Sm3+:Y2SiO5, deduced through the use of Raman heterodyne spectroscopy performed along 9 different crystallographic directions. The maximum principle g values were determined to be 0.447 (site 1) and 0.523 (site 2) for the ground state and 2.490 (site 1) and 3.319 (site 2) for the excited state. The determination of these g tensors provide essential spin Hamiltonian parameters that can be utilized in future magnetic and hyperfine studies of Sm3+:Y2SiO5, with applications in quantum information storage and communication devices. | en |
dc.identifier.citation | Jobbitt NL, Wells J-PR, Reid MF, Longdell JJ A Raman heterodyne determination of the magnetic anisotropy for the ground and optically excited states of Y$_{2}$SiO$_{5}$ doped with Sm$^{3+}$. Physical Review B. 103(20). | en |
dc.identifier.doi | http://doi.org/10.1103/physrevb.103.205114 | |
dc.identifier.issn | 2469-9950 | |
dc.identifier.issn | 2469-9969 | |
dc.identifier.uri | https://hdl.handle.net/10092/101958 | |
dc.language | en | |
dc.language.iso | en | |
dc.publisher | American Physical Society (APS) | en |
dc.rights | All rights reserved unless otherwise stated | en |
dc.rights.uri | http://hdl.handle.net/10092/17651 | en |
dc.subject.anzsrc | Fields of Research::34 - Chemical sciences::3401 - Analytical chemistry::340101 - Analytical spectrometry | en |
dc.title | A Raman heterodyne determination of the magnetic anisotropy for the ground and optically excited states of Y$_{2}$SiO$_{5}$ doped with Sm$^{3+}$ | en |
dc.type | Journal Article | en |
uc.college | Faculty of Science | |
uc.department | School of Physical & Chemical Sciences |
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