Modified class-F distributed amplifier
| dc.contributor.author | Eccleston, K.W. | |
| dc.date.accessioned | 2010-01-06T03:36:32Z | |
| dc.date.available | 2010-01-06T03:36:32Z | |
| dc.date.issued | 2004 | en |
| dc.description.abstract | The class-F power amplifier is known for its high efficiency. The class-F single-ended dual-fed distributed amplifier integrates both class-F amplification and efficient power combining in the one circuit, without using additional n-way power combiners. In this letter the earlier reported circuit topology and design method is modified to account for drain parasitic reactances. A 1.8-GHz amplifier employing two packaged field effect transistors was designed and tested. The measured drain dc efficiency and corresponding output power with an input generator available power of 14 dBm was 71% and 22 dBm, respectively. | en |
| dc.identifier.citation | Eccleston, K.W. (2004) Modified class-F distributed amplifier. IEEE Microwave and Wireless Component Letters, 14(10), pp. 481-483. | en |
| dc.identifier.doi | https://doi.org/10.1109/LMWC.2004.834570 | |
| dc.identifier.issn | 1531-1309 | |
| dc.identifier.uri | http://hdl.handle.net/10092/3322 | |
| dc.language.iso | en | |
| dc.publisher | University of Canterbury. Electrical and Computer Engineering | en |
| dc.rights | "©2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE." | en |
| dc.rights.uri | https://hdl.handle.net/10092/17651 | en |
| dc.subject.marsden | Fields of Research::290000 Engineering and Technology::290900 Electrical and Electronic Engineering::290901 Electrical engineering | en |
| dc.title | Modified class-F distributed amplifier | en |
| dc.type | Journal Article |
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