Compact dual-fed distributed power amplifier

dc.contributor.authorEccleston, K.W.
dc.date.accessioned2009-12-21T22:23:15Z
dc.date.available2009-12-21T22:23:15Z
dc.date.issued2005en
dc.descriptiondoi 10.1109/TMTT.2004.842508en
dc.description.abstractThe dual-fed distributed amplifier (DFDA) allows efficient combining of field-effect transistors (FETs) at the device level without using -way power combiners. However, the FETs must be spaced 180 , resulting in physically large circuits. In this paper, meandered artificial transmission lines (TLs) comprised of microstrip lines periodically loaded with short open-circuit stubs can be used in place of TLs to reduce the size. The approach incorporates FET input and output capacitances with the artificial TLs, thereby eliminating their detrimental effects on bandwidth and performance. Both simulation and experimental results of a class-A three-FET single-ended DFDA designed to operate at 1.8 GHz demonstrate the feasibility of this approach and the validity of the design method. The size reduction is approximately one-third compared to realization using microstrip lines only, and the maximum efficiency is greater than 35% over a bandwidth of 15%.en
dc.identifier.citationEccleston, K.W. (2005) Compact dual-fed distributed power amplifier. IEEE Transaction on Microwave Theory and Techniques, 53(3, Part 1), pp. 825-831.en
dc.identifier.issn0018-9480
dc.identifier.urihttp://hdl.handle.net/10092/3295
dc.language.isoen
dc.publisherUniversity of Canterbury. Electrical and Computer Engineeringen
dc.rights"©2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE."en
dc.rights.urihttps://hdl.handle.net/10092/17651en
dc.subjectdistributed amplifiersen
dc.subjectmicrostrip circuitsen
dc.subjectmicrowave field-effect transistor (FET) amplifiersen
dc.subjectmicrowave poweren
dc.subject.marsdenFields of Research::290000 Engineering and Technology::290900 Electrical and Electronic Engineeringen
dc.titleCompact dual-fed distributed power amplifieren
dc.typeJournal Article
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