Modelling the temperature dependent reverse recovery behaviour of power diodes

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dc.contributor.authorReid, M.D.
dc.contributor.authorRound, S.
dc.contributor.authorDuke, R.
dc.date.accessioned2008-09-21T21:41:03Z
dc.date.available2008-09-21T21:41:03Z
dc.date.issued2000en
dc.description.abstractA power diode PSpice model is presented for cryogenic use. This model can accurately simulate the diodes reverse recovery behaviour over all temperatures from 77K to room temperature. It has been tested over the full range of temperatures and the match with experimental data is excellent.en
dc.identifier.citationReid, M.D., Round, S. and Duke, R. (2000) Modelling the temperature dependent reverse recovery behaviour of power diodes. Tokyo, Japan: International Power Electronics Conference, 2000. 779--783.en
dc.identifier.urihttp://hdl.handle.net/10092/1603
dc.language.isoen
dc.publisherUniversity of Canterbury. Electrical and Computer Engineering.en
dc.rights.urihttps://hdl.handle.net/10092/17651en
dc.subject.marsdenFields of Research::290000 Engineering and Technology::290900 Electrical and Electronic Engineering::290901 Electrical engineeringen
dc.titleModelling the temperature dependent reverse recovery behaviour of power diodesen
dc.typeConference Contributions - Other
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