Eccleston, K.W.Kyaw, O.2010-01-062010-01-062004Eccleston, K.W., Kyaw, O. (2004) Analysis and design of class-B dual fed distributed power amplifiers. IEEE Proceedings H: Microwaves, Antennas and Propagation, 151(2), pp. 104-108.1350-2417http://hdl.handle.net/10092/3325The analysis of, and derivation of design equations for, a class-B balanced single-ended dual-fed distributed amplifier is presented. This approach allows efficient combining of FET output power without multi-way power combiners, has a good port match, and is easy to design as the gate and drain transmission lines are uniform. The design method ensures that all FETs are optimally used and the efficiency is comparable to that of a conventional single-transistor class-B power amplifier using the same FET type. The design method was applied to a class-B four-FET balanced single-ended dual-fed distributed amplifier designed to operate at 1.8GHz. Large-signal measurements revealed 8% downward shift of the centre frequency. The measured output power and drain efficiency was consistent with the simulations. The efficiency of the amplifier was comparable to a conventional single-transistor class-B power amplifier using the same type of FET.en"©2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE."Journal ArticleFields of Research::290000 Engineering and Technology::290900 Electrical and Electronic Engineering::290901 Electrical engineering