Zinc tin oxide metal semiconductor field effect transistors and their improvement under negative bias (illumination) temperature stress

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dc.contributor.authorDang, Giang
dc.contributor.authorKawaharamura T
dc.contributor.authorFuruta M
dc.contributor.authorAllen, Martin
dc.date.accessioned2024-01-07T22:07:41Z
dc.date.available2024-01-07T22:07:41Z
dc.date.issued2017
dc.description.abstract© 2017 Author(s). Metal-semiconductor-field-effect-transistors (MESFETs) with silver oxide Schottky gates on zinc tin oxide (ZTO) channels showed fundamental differences in stability compared to conventional amorphous-oxide semiconductor thin-film-transistors (AOS-TFTs). The most severe negative-bias-temperature and negative-bias-illumination-temperature stress conditions, which usually degrade the performance of AOS-TFTs, significantly improved the switching characteristic of these ZTO MESFETs, producing devices with on:off current ratios, mobilities, and subthreshold swings of 8 × 106, 12 cm2 V−1 s−1, and 180 mV/dec, respectively. Further analysis confirmed that both negative bias and temperature (65 °C) were simultaneously required to produce this permanent effect that was linked to the electromigration of ionized donors from the MESFET depletion-region.
dc.identifier.citationDang GT, Kawaharamura T, Furuta M, Allen MW (2017). Zinc tin oxide metal semiconductor field effect transistors and their improvement under negative bias (illumination) temperature stress. Applied Physics Letters. 110(7). 073502-073502.
dc.identifier.doihttp://doi.org/10.1063/1.4976196
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.urihttps://hdl.handle.net/10092/106405
dc.languageen
dc.publisherAIP Publishing
dc.rightsAll rights reserved unless otherwise stated
dc.rights.urihttp://hdl.handle.net/10092/17651
dc.subject.anzsrc40 - Engineering::4009 - Electronics, sensors and digital hardware::400904 - Electronic device and system performance evaluation, testing and simulation
dc.titleZinc tin oxide metal semiconductor field effect transistors and their improvement under negative bias (illumination) temperature stress
dc.typeJournal Article
uc.collegeFaculty of Engineering
uc.departmentElectrical and Computer Engineering
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