In-Situ Monitoring of Photoresist Thickness Contour (2006)
Type of ContentConference Contributions - Published
PublisherUniversity of Canterbury. Mechanical Engineering.
AuthorsHo, W.K., Chen, X.Z., Wu, X.D., Tay, A.show all
In microelectronics processing, coating of photoresist is a common process. It is important to ensure the uniformity of the photoresist thickness across the wafer. In this paper, we propose an in-situ monitoring system. In the setup, a spectrometer is used to measure the photoresist thickness contour on the wafer after the spin-coat step or edge-bead removal step. The experimental results are compared with off-line ellipsometer measurements. The worst-case error is experimentally found to be less than 2%.
CitationHo, W.K., Chen, X.Z., Wu, X.D., Tay, A. (2006) In-Situ Monitoring of Photoresist Thickness Contour. Singapore: 2006 4th IEEE International Conference on Industrial Informatics (INDIN), 16-18 Aug 2006. Proceedings of 2006 IEEE International Conference on Industrial Informatics, 1091-1095.
This citation is automatically generated and may be unreliable. Use as a guide only.