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    Selective Filling and Sintering of Copper Nanoclusters for Interconnect

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    Author
    Tee, K.C.
    Lassesson, A.
    van Lith, J.
    Brown, S.A.
    Partridge, J.G.
    Schulze, M.
    Blaikie, R.J.
    Date
    2007
    Permanent Link
    http://hdl.handle.net/10092/2055

    In copper interconnect technology, dielectric trenches are patterned, filled with copper, and polished. We report a cluster-based deposition technology that provides efficient trench filling and excellent selectivity between trenches and plateaus on damascene structures. The selectivity arises due to the propensity for reflection of clusters from the planar surfaces between trenches. Trenches of sub-200 nm widths, with various diffusion barriers and seed layers, and up to 5 : 1 aspect ratios have been completely filled with copper clusters. We also show that copper clusters can be sintered into a seed layer using hydrogen annealing. Thus, dense copper films within trenches are obtained. Preliminary results from planar samples show that the resistivity is around 2.3 times 10-8 Omegam.

    Subjects
    Cluster deposition
     
    copper
     
    damascene trench
     
    integrated circuit interconnections
     
    integrated circuit metallization
     
    materials science and technology
     
    Fields of Research::290000 Engineering and Technology::291800 Interdisciplinary Engineering::291804 Nanotechnology
     
    Fields of Research::290000 Engineering and Technology::290900 Electrical and Electronic Engineering::290902 Integrated circuits
    Collections
    • Engineering: Journal Articles [932]
    • Science: Journal Articles [500]
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