Effect of FET model parameters on simulation of RF amplifiers (2006)
AuthorsSmith, K., Eccleston, K.W.show all
Accurate FET Model parameters need to be determined to give accurate simulation results for RF amplifiers. The accuracy required varies depending on the application of the final amplifier. For Doherty amplifiers, a high accuracy is required for the transfer characteristic of the amplifier. An amplifier was simulated using a model obtained from data sheet information, and then built. Measurements were taken, and new model parameters were determined, in order to improve the accuracy of the simulation results. The new parameters gave significantly improved results, with only a small discrepancy in the amplifier transfer characteristics at high power levels
CitationSmith, K., Eccleston, K. (2006) Effect of FET Model Parameters on Simulation of RF Amplifiers. Christchurch, New Zealand: 13th Electronics New Zealand Conference (ENZCON2006), 13-14 Nov 2006. Proceedings of the Thirteenth Electronics New Zealand Conference ENZCon'06, 240-243.
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