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    • Selective Filling and Sintering of Copper Nanoclusters for Interconnect 

      Tee, K.C.; Lassesson, A.; van Lith, J.; Brown, S.A.; Partridge, J.G.; Schulze, M.; Blaikie, R.J. (University of Canterbury. Electrical and Computer Engineering.University of Canterbury. Physics and Astronomy., 2007)
      In copper interconnect technology, dielectric trenches are patterned, filled with copper, and polished. We report a cluster-based deposition technology that provides efficient trench filling and excellent selectivity ...