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Please use this identifier to cite or link to this item: http://hdl.handle.net/10092/495

Title: In-Situ Monitoring of Photoresist Thickness Contour
Authors: Ho, W.K.
Chen, X.Z.
Wu, X.D.
Tay, A.
Issue Date: 2006
Citation: Ho, W.K., Chen, X.Z., Wu, X.D., Tay, A. (2006) In-Situ Monitoring of Photoresist Thickness Contour. Singapore: 2006 4th IEEE International Conference on Industrial Informatics (INDIN), 16-18 Aug 2006. Proceedings of 2006 IEEE International Conference on Industrial Informatics, 1091-1095.
Source: http://dx.doi.org/10.1109/INDIN.2006.275769
Abstract: In microelectronics processing, coating of photoresist is a common process. It is important to ensure the uniformity of the photoresist thickness across the wafer. In this paper, we propose an in-situ monitoring system. In the setup, a spectrometer is used to measure the photoresist thickness contour on the wafer after the spin-coat step or edge-bead removal step. The experimental results are compared with off-line ellipsometer measurements. The worst-case error is experimentally found to be less than 2%.
Publisher: University of Canterbury. Mechanical Engineering.
Research Fields: Fields of Research::290000 Engineering and Technology::290900 Electrical and Electronic Engineering::290903 Other electronic engineering
URI: http://hdl.handle.net/10092/495
Rights URI: http://library.canterbury.ac.nz/ir/rights.shtml
Appears in Collections:Conference Contributions

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